stps80h100cy preliminary datasheet ? november 1999 - ed: 1b high voltage power schottky rectifier i f(av) 2 x 40 a v rrm 100 v tj (max) 175 c v f (max) 0.70 v main product characteristics high reverse voltage negligible switching losses low forward voltage drop low leakage current high temperature low thermal resistance features and benefits dual center tap schottky rectifier suited for switched mode power supplies and high frequencydc to dc converters. packaged in max247, this device is intended for use in high frequency computer and telecom converters. description max247 a1 k a2 symbol parameter value unit v rrm repetitive peak reverse voltage 100 v i f(rms) rms forward current 50 a i f(av) average forward current tc = 155 c d = 0.5 per diode per device 40 80 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal 400 a i rrm repetitive peak reverse current tp = 2 m s square f = 1khz 2 a t stg storage temperature range - 65 to + 175 c t j maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/ m s absolute ratings (limiting values, per diode) a1 a2 k *: dptot dtj < 1 rth ( j - a ) thermal runaway condition for a diode on its own heatsink 1/4
symbol parameter value unit r th (j-c) junction to case per diode 0.7 c/w total 0.5 r th (c) coupling 0.3 thermal resistances symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r =v rrm 20 m a tj = 125 c720ma v f ** forward voltage drop tj = 25 ci f = 40 a 0.8 v tj = 125 ci f = 40 a 0.65 0.7 tj = 25 ci f = 80 a 0.94 tj = 125 ci f = 80 a 0.79 0.84 pulse test : * tp = 5 ms, d <2% ** tp = 380 m s, d <2% to evaluate the maximum conduction losses use the following equation : p = 0.56 x i f(av) + 0.0035 x i f 2 (rms) static electrical characteristics (per diode) 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 if(av) (a) pf(av)(w) t d =tp/t tp d =1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 fig. 1: average forward power dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 175 0 5 10 15 20 25 30 35 40 45 50 tamb( c) if(av)(a) rth(j-a)=5 c/w rth(j-a)=rth(j-c) t d =tp/t tp fig. 2: average forward current versus ambient temperature ( d =0.5, per diode). when the diodes 1 and 2 are used simultaneously: d tj(diode 1) = p(diode1) x r th(j-c) (per diode) + p(diode 2) x r th(c) stps80h100cy 2/4
1e-3 1e-2 1e-1 1e+0 0 100 200 300 400 500 t(s) im(a) tc=50 c tc=75 c tc=110 c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values, per diode). 1e-3 1e-2 1e-1 1e+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) zth(j-c)/rth(j-c) single pulse d = 0.5 d = 0.2 d = 0.1 t d =tp/t tp fig. 4: relative variation of thermal impedance junction to case versus pulse (per diode). 0 102030405060708090100 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 vr(v) ir( m a) tj=125 c tj=25 c fig. 5: reverse leakage current versus reverse voltage applied (typical values, per diode). 1 2 5 10 20 50 100 0.1 1.0 5.0 vr(v) c(nf) f=1mhz tj=25 c fig. 6: junction capacitance versus reverse voltage applied (typical values, per diode). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 500 vfm(v) ifm(a) tj=25 c tj=125 c fig. 7: forward voltage drop versus forward current (maximum values, per diode). stps80h100cy 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com package mechanical data max247 a e e l1 b1 b2 b l d c a1 ref. dimensions millimeters inches min. max. min. max. a 4.70 5.30 0.185 0.209 a1 2.20 2.60 0.087 0.102 b 1.00 1.40 0.038 0.055 b1 2.00 2.40 0.079 0.094 b2 3.00 3.40 0.118 0.133 c 0.40 0.80 0.016 0.031 d 19.70 10.30 0.776 0.799 e 5.35 5.55 0.211 0.219 e 15.30 15.90 0.602 0.626 l 14.20 15.20 0.559 0.598 l1 3.70 4.30 0.146 0.169 ordering type marking package weight base qty delivery mode stps80h100cy stps80h100cy max247 4.4g 30 tube epoxy meets ul94,v0 stps80h100cy 4/4
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